Zero-Process-Change SiGe Heterojunction Avalanche Photodiode for High-Speed, High-Gain Detection Near the Silicon Band Edge

Patrick S. Goley,Edward Preisler,John D. Cressler

IEEE Electron Device Letters（2021）

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摘要

A novel design for a silicon-integrated avalanche photodiode (APD) capable of high internal gain (>16,000) is presented. The APD was fabricated in an unmodified, commercial high-volume, high-performance (300 GHz ${f}_{T}/{f}_{\text {MAX}}$ ) silicon-germanium (SiGe) BiCMOS technology. The APD’s high gain is partially attrib...

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关键词

Avalanche photodiodes,Junctions,Silicon germanium,Silicon,Optical pulses,Anodes,Photoconductivity

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