Submicron Channel Length High-Performance Metal Oxide Thin-Film Transistors
IEEE Electron Device Letters(2021)
摘要
In this work, we present a new fabrication methodology to enable high-performance thin-film transistor (TFT) with submicron channel length. The method can exceed the resolution limit of a conventional photolithography compatible with large-area substrates such as a glass or a plastic. The lift-off and back-channel etching techniques were employed to delineate the channel in the bottom-gate top-con...
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关键词
Thin film transistors,Logic gates,Metals,Lithography,Electrodes,Stress,Insulators
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