High Growth Rate Rear-Junction GaAs Solar Cell with a Distributed Bragg Reflector

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)(2021)

引用 3|浏览2
暂无评分
摘要
Fast epitaxial growth is an attractive method for reducing III-V photovoltaic device cost. Here, we grow a high-performance, rear-junction GaAs solar cell at 1 µm/min via metal organic chemical vapor deposition. We integrate an epitaxial distributed Bragg reflector with the solar cell to increase the optical path length for photons near the band-edge, enhancing photon recycling without the need fo...
更多
查看译文
关键词
Performance evaluation,Photovoltaic cells,Current measurement,Gallium arsenide,Metals,Epitaxial growth,Recycling
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要