GaAs quantum dots grown by droplet etching epitaxy as quantum light sources
APPLIED PHYSICS LETTERS(2021)
摘要
This Perspective presents an overview on the epitaxial growth and optical properties of GaAs quantum dots obtained with the droplet etching method as high-quality sources of quantum light. We illustrate recent achievements regarding the generation of single photons and polarization entangled photon pairs and the use of these sources in applications of central importance in quantum communication such as entanglement swapping and quantum key distribution. (C) 2021 Author(s).
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关键词
gaas,epitaxy,quantum,dots
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