Analysis of the Stress-Wave Influence Parameters of Silicon MOSFET Under 300V Drain Source Voltage

The traditional condition monitoring (CM) methods for power electronic devices are normally using electrical, magnetic, and thermal sensors. Alternatively, this paper uses the acoustic emission (AE) sensor to measure the mechanical stress wave generated inside the power electronic devices such as MOSFETs. Specifically, this paper focuses on the influence of measured surface, electrical parameters,...