Atomic Layer Deposition of Titanium Silicate for Multi-Patterning Process
2021 IEEE International Interconnect Technology Conference (IITC)(2021)
摘要
We develop the atomic layer deposition (ALD) process of titanium silicate with halide-free precursor and evaluate film properties as a spacer for self-aligned double/quadruple patterning (SADP/SAQP). Growth characteristics are investigated depending on substrate temperature. Growth per cycle (GPC) at 100 °C is largely observed than the estimated value, while that as 200 °C shows an opposite trend....
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关键词
Temperature dependence,Temperature,Atomic layer deposition,Conferences,Titanium,Market research,Reflection
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