Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

IEEE Transactions on Electron Devices(2021)

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摘要
AlGaN/GaN Schottky barrier diode (SBD) temperature sensor with low turn-on voltage was fabricated by employing the recessed anode structure. This AlGaN/GaN SBD demonstrates good rectification in a broad temperature scope from 298 to 473 K. Compared with common planar diode, the recessed anode SBD shows a relatively lower turn-on voltage and better Schottky contact characteristics. The temperature-...
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关键词
Anodes,Temperature sensors,Wide band gap semiconductors,Aluminum gallium nitride,MODFETs,HEMTs,Schottky diodes
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