A 4T2R RRAM Bit Cell for Highly Parallel Ternary Content Addressable Memory

Xuehong Wang,Linfang Wang,Ye Wang,Junjie An,Chunmeng Dou,Zuheng Wu,Xumeng Zhang,Jing Liu,Chenggao Zhang,Zhihong Yao,Zhaoan Yu,Tuo Shi,Chixiao Chen,Xiping Jiang,Meng-Fan Chang,Qi Liu

IEEE Transactions on Electron Devices（2021）

引用 18|浏览27

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摘要

In this work, we present a four-transistor-two-resistor (4T2R) ternary content addressable memory (TCAM) bit cell based on the resistive memory (RRAM), comprising the conventional two-transistor-two-resistor (2T2R) cell with two additional comparison transistors. It can effectively amplify the match-line signal ratio (ML-ratio), lower the leakage current of the match cell ( 更多

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关键词

Transistors,Microelectronics,Cams,Switches,Signal to noise ratio,Sensors,SPICE

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