Dopant-Tunable Ultrathin Transparent Conductive Oxides for Efficient Energy Conversion Devices

Highlights Dopant-tunable transparent conductive oxide (≤ 50 nm) fabricated via electric-field-driven metal implantation (m-TCOs; m= Ni, Ag, and Cu) is demonstrated. The m-TCOs exhibit ultrahigh transparency, low sheet resistance, and broad work function tunability, leading to outstanding performance in various optoelectronic devices. The work function change is attributed to the interstitial metal atoms that provide the empty d-orbital, resulting in the shift of the Fermi level.