Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET With Low-Permittivity Inner Spacers

Yi-Ting Wu,Meng-Hsueh Chiang,Jone F. Chen,Tsu-Jae King Liu

IEEE Transactions on Electron Devices（2021）

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摘要

A high-permittivity (high- ${k}$ ) inserted-oxide FinFET (iFinFET) structure with low-permittivity inner spacers is proposed for CMOS transistor scaling to the 3-nm technology node and beyond. The process to fabricate an iFinFET is similar to the process to fabricate a nanosheet field-effect transistor (NSFET); no additional li...

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关键词

Logic gates,FinFETs,Permittivity,Gallium arsenide,Etching,Performance evaluation,Hafnium oxide

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