Passivation of Solution-Processed a-IGZO Thin-Film Transistor by Solution Processable Zinc Porphyrin Self-Assembled Monolayer

Maruti B. Zalte,Tejas R. Naik, A. Alka,M. Ravikanth,V. Ramgopal Rao,Maryam Shojaei Baghini

IEEE Transactions on Electron Devices（2021）

引用 6|浏览4

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摘要

Bottom-gate bottom contact amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) were fabricated using solution processing. The nonpassivated a-IGZO-TFTs exhibited a significant threshold voltage shift, large hysteresis in the current–voltage characteristics, and degradation in the subthreshold swing. TFTs’ performance degradation is due to the interaction of its back channel w...

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关键词

Passivation,Thin film transistors,Zinc,Surface topography,Degradation,Gallium,Performance evaluation

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