Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics
IEEE Transactions on Electron Devices（2021）
摘要
We extract an AlGaN surface state spectrum with a density ( ${D}_{\text{SS}}$ ) ranging between $1.4\times10$ 12 and $4.7\times10$ 12 eV−1cm−2更多
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关键词
Wide band gap semiconductors,Aluminum gallium nitride,HEMTs,MODFETs,III-V semiconductor materials,Aluminum nitride,Surface states
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