Write Asymmetry of Spin-Orbit Torque Memory Induced by in-Plane Magnetic Fields

Write asymmetry, the significantly different write current for high-to-low and low-to-high resistance switching because of natural stochastic behaviors of magnetization, is a fundamental issue in magnetic random-access memory (MRAM). For high-performance spin transfer torque (STT) MRAM, it can be eliminated by precisely controlling atomically thin magnetic multilayers or by introducing compensatio...