A Fast Short-Circuit Detection and Protection Method for Wide Band-gap Devices based on Current Derivative Sensing

Over the years, robust Short-Circuit (SC) detection and protection methods have been developed for silicon (Si) devices, such as Si Insulated Gate Bipolar Transistors (IGBT) or Si Metal Oxide Field Effect Transistors (MOSFET). The emergence of Wide Band-Gap (WBG) devices as Silicon Carbide (SiC) MOSFETs and Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) brought the need of new pro...