Characterization of Reconfigurable FETs Fabricated on Si Epilayer on SiO 2

Seong Hyun Lee,Sang-Hoon Kim,Jeong Woo Park,Tae Moon Roh,Sungyeop Jung,Dongwoo Suh

2021 International Semiconductor Conference (CAS)（2021）

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摘要

We report characteristics of reconfigurable field effect transistors (FETs) fabricated on locally grown Si epilayer on amorphous SiO2. The present devices show ideal electrical properties, i.e., flexible change from n-type to p-type FET or vice versa according to the polarity of gate bias. Besides current-voltage features under various operation conditions, the effect of geometrical str...

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关键词

Reconfigurable FET,CMOS,Epitaxial Si,EM simulation

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