Superior Interface Trap Variability Immunity of Horizontally Stacked Si Nanosheet FET in Sub-3-nm Technology Node

The effect of interface trap variability (ITV) on horizontally stacked nanosheet FET (NSHFET) has been explored using TCAD based 3-D quantum corrected Drift-Diffusion simulation framework for sub-3 nm technology node. It is revealed that 3-stacked NSHFET shows 9.09% lesser VT variation compared to 3-stacked nanowire FET (NWFET) due to combined ITV sources such as charge neutrality level...