Extraordinary Hall Balance In Ultrathin Srruo3 Bilayers

JOURNAL OF PHYSICS-MATERIALS(2020)

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摘要
The correlated 4d transition metal oxide SrRuO3 (SRO) features an anomalous Hall effect that originates from momentum-space sources of Berry curvature and depends sensitively on the magnetization. Here, we exploit this sensitivity and realize an epitaxial extraordinary Hall balance device, consisting of two ultrathin layers of SRO, separated by an insulating SrTiO3 (STO) spacer. Our results highlight the potential of ultrathin SRO in the realization of oxide-based spintronic devices.
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关键词
oxide interfaces, spintronics, topological electronics
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