A Study Of Beol Processed Hf0.5zr0.5o2-Based Ferroelectric Capacitors And Their Potential For Automotive Applications

This work presents the results of our study of Back-End-of-Line (BEOL)-processed Hf0.5Zr0.5O2 (HZO)-based Metal-Ferroelectric-Metal (MFM) capacitors fabricated at temperatures never exceeding 400 degrees C, and over a wide range of areas (10(-2) to 10(3) mu m(2)). These devices exhibit very tight distributions throughout the 12-in wafers that we measured, as well as neglectable size dependence. This work also presents our current understanding of the wake-up issue, and suggestion for possible ways of device engineering. In addition, the potential for automotive applications is demonstrated based on the results of a set of MFM devices systematically measured and analyzed at elevated temperatures (150-427 degrees C).