4.1-Inch Full Color Amoled Driving By Top Gate Nanocrystalline Silicon Thin Film Transistor Array

King-Yuan Ho,Hung-Chien Lin,Han-Sheng Dai,Po-Feng Lee,Chih-Chieh Hsu,Shih-Yung Peng,Chen-Wei Lin,Chih-Hung Cheng,Bo-Cheng Kung, Wen-Ya Chao,Jing-Yi Yan,Hua-Chi Cheng

IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3（2010）

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摘要

High performance nanocrystalline silicon thin film transistors are achieved with top gate staggered structure. The nc-Si is directly deposited by 13.56MHz plasma enhanced chemical vapor deposition (PECVD) at 200 degrees C. Good device performance, uniformity, and reliability make it possible to be integrated into active matrix organic light emitting diode (AMOLED) applications.

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