Microstructure Of Pambe-Grown Inn Layers On Si(111)

The microstructure of InN layers grown by plasma-assisted molecular beam epitaxy on Si(111) substrates and an AIN buffer layer was investigated. InN layers with a thickness of similar to 500 nm were deposited at substrate temperatures between 325 degrees C and 375 degrees C under otherwise identical conditions. The structural characterization was performed by scanning electron microscopy and different transmission electron microscopy techniques including selective-area electron diffraction, electron-energy loss spectroscopy and energy-dispersive X-ray spectroscopy. The microstructure of the InN layers changes considerably despite the comparably small interval of growth temperatures. (c) 2011 Elsevier B.V. All rights reserved.