Characterisation Of High Current Density Resonant Tunnelling Diodes For Thz Emission Using Photoluminescence Spectroscopy

We present a detailed low temperature photoluminescence spectroscopic study of similar to MAcm(-2) resonant tunnelling diodes (RTDs). The epitaxial structure is challenging to characterize using conventional techniques as it consists of a single, very thin AlAs/InGaAs QW. We describe how the doping level may be mapped using the Moss-Burstein shift. Using a novel characterisation scheme with a 'dummy' RTD active element we are able to unambiguously determine the energetic position of the resonance, without inference using the ill-defined band-offsets, and more accurately characterise the epitaxial structure.