Optical Gain In Er Doped Gan Multiple Quantum Wells

We report the realization of lasing in Er-doped GaN multiple quantum wells in the technologically crucial 1.54-mu m wavelength at room temperature. We have obtained optical gain in the multiple quantum well structure by using a variable stripe technique. The stimulated emission from the material has been revealed from the characteristic threshold behavior of spectral linewidth narrowing, and the emission intensity as a function of pump fluence.