Migration Enhanced Epitaxial Growth And Magnetoluminescence Spectroscopy Of Quantum Wire

High-quality GaAs/Al0.5Ga0.5As and InAs/AlAs quantum wire superlattices (QWR) are obtained by migration enhanced epitaxy on 2 degrees vicinal GaAs and 3 degrees vicinal InP substrate, respectively. A superbly well-defined 1-D structure was observed in InAs/AlAs QWR by AFM image in the wide range of growth temperature. The linewidth change of the magneto-luminescence peaks in GaAs/Al0.5Ga0.5As QWR is very unique, which is step-like for the field B<9T and linear for B>9T. This anomalous change, which is well explained with the statistical fluctuation model and the physical dimensions of magneto-exciton, cyclotron orbit and QWR, also provides an strong evidence of 1-D confinement.