Thermally Stable Integrated Se-Based Ots Selectors With > 20 Ma/Cm(2) Current Drive, > 3.10(3) Half-Bias Nonlinearity, Tunable Threshold Voltage And Excellent Endurance

We report on novel integrated Se-based Ovonic Threshold Switching selector devices, with sizes down to 50nm, which can be operated reliably at high drive current densities, exceeding 20MA/cm(2), and have high half-bias nonlinearity exceeding well 10(3). We show functional devices after a thermal budget of 350 degrees C. Their electrical properties are tunable by careful control of the GexSe1-x films composition, thickness or process condition.