Inxga1-Xas/Gaas-Based Intermediate Band Solar Cell: Effects Of Quantum Dots

This paper describes the influence of In0.53Ga0.47As/GaAs quantum dots (QDs) in the intermediate hand solar cell (IBSC). The In0.53Ga0.49As QDs have been inserted in the intrinsic region of a p-i-n GaAs solar cell in order to increase the absorption range as well as cell efficiency. The cell structure has been optimized with respect to the horizontal and vertical dot-to-dot spacing. The optimum efficiency is enhanced front 27.1% to 32.09% for increasing the number of QD layers.