2.5-3.0 Mu M Strain-Compensated Inas/Inxga1-Xas Multiple Quantum Well Lasers Grown On Inalas Metamorphic Buffer Layers

Yingjie Ma,Yi Gu,Yonggang Zhang,Xingyou Chen,Yuanying Cao,Suping Xi,Ben Du

2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)（2016）

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摘要

InP-based strain-compensated InAs/InxGa1-xAs multiple quantum well lasers emitting at 2.5-3.0 mu m are realized on InAlAs metamorphic buffer layers. A long lasing wavelength up to 2.9 mu m at 230 K in pulsed mode is achieved.

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