Cmos Models Transistor Distortion

Ali Abuelma'atti,Iain Thayne,Muhammad Taher Abuelma'atti

MICROWAVES & RF（2012）

引用 0|浏览1

暂无评分

摘要

Based on symbolically defined devices (SDDs), this model predicts the nonlinear distortion contributions of individual transistors to an RF silicon CMOS design.

查看译文

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要