Numerical Study On The Mixing Effects Of Double-Layer Target Irradiated By High-Intensity Pulsed Ion Beam

Monte Carlo method was used to simulate the interaction between ions and Ti film Al substrate double-layer target system. While the high-intensity pulsed ion beam (HIPIB) interacts with target materials, the deposited energy of HIPIB in the materials made the surface temperature arising rapidly, and meanwhile the high energy ions implanted into the target made cross mixing among the atoms of double-layer target at the film and substrate interface. The energy of ions deposits in some range and shows certain profile. The shooting ions and the energy distribution influence the process of melting or vaporization of target materials. This may change the adhesion of interface between the film and substrate. As results, the evolution of energy distribution of the HIPIB in the double-layer target and the effects to the mixing region by the high energy shooting ions were obtained according to the calculation. The cascade collision mixing is not the main process to the mixing of the double-layer target by HIPIB irradiation, and the most preferable ion current densities to obtain the better adhesion effect lie in the range of 100A/cm(2)similar to 150A/cm(2) based on the simulation.