High-Power Inp Photodetectors

Andreas G. Steffan, Michael Margraf,Efthymios Rouvalis,Andreas Beling

2019 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP)（2019）

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摘要

We report on the performance and reliability of hermetic photodetectors modules based on flip-chipped Modified Uni-Traveling Carrier (MUTC) PDs with active areas of 40 mu m, 28 mu m and 20 mu m diameter. The modules demonstrated a 3-dB bandwidth of up to 14, 26 and 30 GHz. High-saturated RF output power was achieved with output power levels of 25 dBm at 15 GHz, 21 dBm at 25 GHz and 17 dBm at 30 GHz. Ten modules were monitored at 120 mA of photocurrent at 50 degrees C and over 160 hours without any performance degradation or failure.

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关键词

output power levels,performance degradation,high-power InP photodetectors,reliability,hermetic photodetectors modules,active areas,high-saturated RF output power,flip-chipped modified uni-traveling carrier PDs,frequency 15.0 GHz,frequency 25.0 GHz,frequency 30.0 GHz,current 120.0 mA,time 160.0 hour,size 20.0 pm,frequency 14.0 GHz,frequency 26.0 GHz,temperature 50.0 degC,size 40.0 pm,InP

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