A 2.3 Mu M Cutoff Wavelength Photodiode On Inp Using Lattice-Matched Gainas-Gaassb Type-Ii Quantum Wells
2005 International Conference on Indium Phosphide and Related Materials（2005）
摘要
We report on a p-i-n photodiode on InP substrate using lattice matched GaInAs-GaAsSb type-II quantum wells for absorption up to 2.3 mu m. Peak room temperature external quantum efficiency of 60% was observed at 2.3 mu m.
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