Self-Powered Solar-Blind Photodiodes Based On Efg-Grown (100)-Dominant Beta-Ga2o3 Substrate

We report the edge-defined-film-fed (EFG)-grown beta-Ga2O3-based Schottky photodiodes. The device has a reverse leakage current of similar to nA and a rectified ratio of similar to 10(4) at +/- 5 V. In addition, the photodiode detector shows a dark current of 0.3 pA, a photo-responsivity (R) of 2.875 mA/W, a special detectivity (D*) of 10(10) Jones, and an external quantum efficiency (EQE) of 1.4% at zero bias, illustrating a self-powered operation. This work may advance the development of the Ga2O3-based Schottky diode solar-blind photodetectors.