Effects Of B-Doped Mg4nb2o9 Groups On The Electrical Properties Of Bnt-Blt-Based Ceramics

[(Bi1/2Na1/2)(0.92)Ba0.05La0.02](Mg1/3Nb2/3) (x) Ti(1-0.5 (x) O-)(3)(BNT-BLMNT, x = 0.01, 0.03,0.05,0.07) lead-free anti-ferroelectric ceramics were synthesized by a conventional solid-state. The effects of B-doped Mg4Nb2O9 groups on phase structures, compositional distribution and electrical properties of BNT-BLMNT ceramics were systematically investigated to further understand the mechanism of phase transition.It was found that the grain size of ceramic materials tends to decrease and the distribution becomes more uniform, indicating that Mg4Nb2O9 is conducive to the synthesis of ceramic materials in this system and effectively improves the grain size and distribution of this material with the increase of B-doped Mg4Nb2O9 group content. According to SEM and XRD analysis, Mg4Nb2O9 was completely dissolved in the ceramic crystal, forming a solid solution, all of which were of a single perovskite crystal structure.With the increase of it's content, the remnant polarization (P (r)) decreased significantly, from 38.9 mu C/cm(2)(x = 0.01) to 10.4 mu C/cm(2)(x = 0.05), and the difference between the maximum polarization(P (max)) and the remnant polarization(P (r)) became larger and larger, indicating that the addition of Mg and Nb elements increased the transition trend of the anti-ferroelectric phase.