Temperature Impact (Up To 200 Degrees C) On Performance And Reliability Of Hfo2-Based Rrams

This paper provides an overview o impact (up to 200 C) on the electrical behavio RRAM, during forming, low-field resi SET/RESET, disturb, data retention and en RRAM devices (in a 1T1R configuration) i advanced 65 nm technology are studied for th that forming operation is strongly activated in t 0.5 V per hundred Celsius degree), being much RESET voltages (i. e. < -0.05 V per hundred disturb of HRS at fixed voltage showed to b temperature; endurance up to 3.106 cycles, with stress parameters showed no significant variatio at 150 C up to 68 days showed stable progr after different initial programming algorithms. of the temperature or of oxide-based istance reading, ndurance. HfO2integrated in an his aim. We show temperature (i. e. less for SET and Celsius degree); be independent of h optimized set of on; data retention amming window,