Betavoltaic P(-)-N(+)-Structure Simulation

S. U. Urchuk,V. N. Murashev,S. A. Legotin,A. A. Krasnov,O. I. Rabinovich, K. A. Kuzmina, Y. K. Omel'Chenko, U. V. Osipov,S. I. Didenko

3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016)（2016）

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摘要

In order to increase the betavoltaic batteries efficiency output characteristics of the p(-)-n(broken vertical bar) (n(-)-p(broken vertical bar)) - structures were simulated. Replacing the P-broken vertical bar-n-structures on the p- n(broken vertical bar) and n-p(+) -structures enables the space-charge expansion to the crystal surface and thus to reduce the recombination loss in the heavy doped p(+)- layer and improve conversion of betavoltaic elements efficiency.

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