Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements

Tibor Izsak,Gabriel Vanko,Oleg Babcenko,Andrej Vincze,Marian Vojs,Bohumir Zatko,Alexander Kromka

Materials Science and Engineering: B（2021）

引用 0|浏览6

暂无评分

摘要

•The thermally-induced stress of diamond/SiON/GaN was studied by Raman spectroscopy.•SiON positively influenced the thermally-induced stress.•SIMS depth profiling confirmed sharp interface at SiON/GaN heterostructure.•H and C atoms were trapped in SiON; thus, they not affect the 2DEG at AlGaN/GaN.

查看译文

关键词

Polycrystalline diamond,GaN,Raman spectroscopy,Stress,SIMS

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要