Fabrication Of A Poly(N-Vinyl Carbazole)/Epsilon-Ga2o3 Organic-Inorganic Heterojunction Diode For Solar-Blind Sensing Applications

Herein, a poly(N-vinyl carbazole) (PVK)/epsilon-gallium oxide (epsilon-Ga2O3) heterojunction device was fabricated by spin coating prepared PVK solution onto a epsilon-Ga2O3 thin film produced by metal-organic chemical vapor deposition. Under 254 nm ultraviolet light, the device shows obvious rectification characteristics of 37 at +/- 2 V and has a response speed of 0.52 s rise time and 0.11 s decay time at 5 V. Current-voltage measurement confirmed that the prepared device has the potential to become a self-powered photodetector and displays good stability and a fast response speed under various light intensities and different voltages.