Synthesis And Properties Of Electrically Conductive/Nitrogen Grain Boundaries Incorporated Ultrananocrystalline Diamond (N-Uncd) Thin Films Grown By Microwave Plasma Chemical Vapor Deposition (Mpcvd)
APPLIED SCIENCES-BASEL(2021)
摘要
Research and development have been performed to investigate the effect of total pressure and microwave power on the electrical conductivity of nitrogen (N) atoms' grain boundaries incorporated ultrananocrystalline diamond (N-UNCD) films grown by microwave plasma chemical vapor deposition (MPCVD). Insertion of N atoms into the UNCD film's grain boundaries induces N atoms chemical reaction with C-atoms dangling bonds, resulting in release of electrons, which induce electrical conductivity. Four-point probe electrical measurements show that the highest electrically conductive N-UNCD films, produced until now, exhibit electrical resistivity of similar to 1 Ohm.cm, which is orders of magnitude lower than the >= 106 Ohm.cm for undoped ultrananocrystalline diamond (UNCD) films. X-ray diffraction analysis and Raman spectroscopy revealed that the growth of the N-UNCD films by MPCVD do not produce graphite phase but only crystalline nanodiamond grains. X-ray photoelectron spectroscopy (XPS) analysis confirmed the presence of nitrogen (N) in the N-UNCD films and the high conductivity (no electrical charging is observed during XPS analysis) shown in electrical measurements.
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关键词
MPCVD, carbon materials, thin films, nitrogen atoms, nitrogen-ultrananocrystalline diamond (N-UNCD)
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