Characteristics Of Gzo-Based Multilayer Transparent Conducting Films

Ga-doped ZnO (GZO)/metal/GZO structures were fabricated on glass substrates to be the transparent conducting layers in this study. GZO films and metal films were deposited at room-temperature by a radio-frequency sputter and a thermal evaporator, respectively. The GZO/Ag/GZO (GAG) structures had poor electrical and optical properties due to the formation of Ag islands on the GZO layer. A 1-nm Cu seed layer was deposited on the GZO layer to fabricate the GZO/Ag/Cu/GZO (GACG) structure to improve its electrical and optical properties. The GACG structure had sheet resistance of 9 Omega, average visible transmittance of 86% and figure of merit of 2.5 x 10(-2) Omega(-1). In addition, the sheet resistance of the GACG structure kept almost the same after annealing at 300 degrees C in atmosphere for more than 5 h, which showed good thermal stability.