The influence of oxidation and annealing processes in the phosphorus or nitrogen containing atmosphere on the quality of the dielectric/semiconductor interface in the Ti/SiO₂/4H-SiC metal-oxide-semiconductor structure

The aim of this studies was investigation of the influence of oxidation and annealing processes in the phosphorus or nitrogen containing atmosphere on the quality of the dielectric/semiconductor interface in the Ti/SiO2/4H-SiC metal-oxide-semicondutor structure. It was found that two-stage annealing, in POCl3-containing atmosphere at the temperature of 1000 degrees C, and successively in NO-containing atmosphere at the temperature of 1100 degrees C allows to reduce the density of interface trap to the level of approx. 2x10(11) cm(-2) near the conduction band edge.