X-ray diffraction analysis and X-ray topography of high-quality ScAlMgO4 substrates

Journal of Crystal Growth(2021)

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摘要
•Almost dislocation-free 2-inch SAM substrates was grown by the CZ method.•A narrow RC width down to 7.2 arcsec was obtained by HR-XRC.•The Burgers vectors of dislocations was determined to be parallel to a-axis.•3D configuration of dislocations was non-destructively analyzed by XRT.•Curvature of lattice planes of SAM crystal was analyzed.
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关键词
A1. Characterization,A1. Defects,A1. High resolution X-ray diffraction,A1. X-ray topography,A2. Single crystal growth,B1. Oxides
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