Reduction of threading dislocation densities of N-polar face-to-face annealed sputtered AlN on sapphire

Kanako Shojiki,Kenjiro Uesugi,Shigeyuki Kuboya,Hideto Miyake

Journal of Crystal Growth（2021）

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摘要

•N-polar face-to-face annealed sputtered AlN was fabricated with Al sputtering target.•The controllability of the polarity by changing the sputtering target was demonstrated.•With increasing AlN film thickness, a reduction in the TDDs of N-polar FFA Sp-AlN was observed.

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关键词

A2. Sputtering,B2. AlN,A1. N-polar,A1. Polarity A1. Threading dislocation density

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