Layer-Dependent Giant Magnetoresistance In Two-Dimensional Crps4 Magnetic Tunnel Junctions

Antiferromagnetism within the two-dimensional (2D) family offers a platform for spintronics. The emergent 2D semiconductor CrPS4 is proved to be composed of ferromagnetic layers with antiferromagnetic coupling along the stacking direction in the experiment. By using the first-principles quantumtransport simulation, we evaluate the spin-resolved transport in the magnetic tunnel junction built by the 2D CrPS4 tunnel barrier with large thickness ranges. We find the magnetoresistance generally increases with the number of tunnel layers from 140% (three layers) to a surprising 370 000% (10 layers). An oddeven oscillation magnetoresistance behavior exists in few layers due to the electrode option. Our results will inspire further experimental verification and provide vital insights for 2D spintronics design.