The Path Towards 1 Mu M Monocrystalline Zn3p2 Films On Inp: Substrate Preparation, Growth Conditions And Luminescence Properties

Semiconductors made with earth abundant elements are promising as absorbers in future large-scale deployment of photovoltaic technology. This paper reports on the epitaxial synthesis of monocrystalline zinc phosphide (Zn3P2) films using molecular beam epitaxy with thicknesses up to 1 mu m thickness on InP (100) substrates, as demonstrated by high resolution transmission electron microscopy and x-ray diffraction. We explain the mechanisms by which thick monocrystalline layers can form. We correlate the crystalline quality with the optical properties by photoluminescence at 12 K. Polycrystalline and monocrystalline films exhibit dissimilar photoluminescence below the bandgap at 1.37 and 1.30 eV, respectively. Band edge luminescence at 1.5 eV is only detected for monocrystalline samples. This work establishes a reliable method for fabricating high-quality Zn3P2 thin films that can be employed in next generation photovoltaic applications.