Investigation on Diamond Damaged Process During a Single-Scratch of Single Crystal Silicon Carbide

Through a series of single-scratch experiments, the damaged process of diamond grit and the material removal mechanism of single crystal silicon carbide (SiC) were investigated. The <111> and <110> planes of single diamond grits were used to scratch the carbon (C) face and silicon (Si) face of single crystal SiC, respectively. The damaged process and corresponding typical damaged morphology of diamond grits on different planes were analyzed. The material removal mechanism of single crystal SiC (C face and Si face) is analyzed. The results show that the contact width and the breaking angle were determined as the key damaged parameters of diamond grit by the analysis of the damaged process. However, the key factor to reduce surface damage is the state of the micro-edges that appear on the crystal plane of the diamond grit in contact with the workpiece during the scratching process.