High performance broadband self-driven photodetector based on MXene (Ti3C2Tx)/GaAs Schottky junction

•Ti3C2Tx/GaAs Schottky junction photodetector is prepared by simply dripping Ti3C2Tx MXene solution on GaAs substrate.•High responsivity of ~1.46 A/W, specific detectivity of ~1.23 × 1013 Jones are obtained when the device is operated in self-driven mode.•The photodetector exhibits a broadband response spectrum up to 980 nm due to plasmon-induced hot electrons in Ti3C2Tx MXene film.