Comparative Analysis Of Void-Containing And All-Semiconductor 1.5 Mu M Inp-Based Photonic Crystal Surface-Emitting Laser Diodes

Z. Bian,K. J. Rae,B. C. King,D. Kim, G. Li,S. Thoms,D. T. D. Childs,N. D. Gerrard, N. Babazadeh,P. Reynolds,J. Grant,A. F. Mckenzie, J. R. Orchard,R. J. E. Taylor,R. A. Hogg

AIP ADVANCES（2021）

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摘要

This paper analyzes 2D photonic crystal surface-emitting laser diodes with void-containing and all-semiconductor structures by comparing their simulated mode distribution, band structure, and coupling coefficients. A photonic crystal design with a square lattice and circle atoms is considered.

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关键词

Semiconductor Lasers,Photonic Crystal Devices,Photonic Crystals,Vertical-Cavity Surface-Emitting Lasers (VCSELs)

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