Optical Charge State Manipulation of Divacancy Spins in Silicon Carbide under Resonant Excitation

Spin defects in silicon carbide (SiC) have attracted much attentions in various quantum technologies. In this work, we study the optical manipulation of charge state and coherent control of multifold divacancy spins ensemble in SiC under resonant excitation. The results reveal that the resonantly excited divacancy ensemble counts have dozens of enhancements by repumping a higher-energy laser. Moreover, it has a similar optimal repump laser wavelength of around 670 nm for multiple divacancies. On the basis of this, the optically detected magnetic resonance (ODMR) experiment shows that repump lasers with different wavelengths do not affect the ODMR contrast and line width. In addition, the repump lasers also do not change the divacancy spins’ coherence times. The experiments pave the way for using the optimal repump excitation method for SiC-based quantum information processing and quantum sensing.