A 48 V, 300 Khz, High Current Dc/Dc-Converter Based On Paralleled, Asymmetrical & Thermally Optimized Pcb Embedded Gan Packages With Integrated Temperature Sensor

To make the full performance of the intrinsic 100 V, 5 m Omega gallium nitride transistors available on system level, in this work an asymmetrical & thermally optimized PCB embedded single chip package with integrated resistance thermometer, high temperature capability and a thermal resistance R-th,R-j-hs of 3.3K W-1 is characterized in a 48V to 24 V 300 kHz mild-hybrid DC/DC operation with two paralleled chips in each low- (LS) and high-side (HS). The transistors are mounted on a 4-layer multilayer PCB with 1 mm copper inlays to achieve a high current capability, while allowing narrow logic traces on the same PCB. The designed converter is achieving a light load efficiency of >= 99% and an efficiency of 97% at 60A output current and approximate to 1.3 kW output power in a 48V to 24 V 300 kHz buck-converter operation. The on-board temperature readout circuit and the phase output current sensor offer the possibility to extend the GaN transistors to an intelligent power module by the compact and simple sensors.