Synthesis And Characterization Of Hf-0.5 Zr0.5o2 (Hzo) Ceramic Target Via Modified Solid-State Reaction Method

Ferroelectric random-access memory (FeRAM) is non-volatile, facilitates data storage via ferroelectricity, and it has attracted research attention as potential data storage means in high-performance computing applications. However, retention and fatigue problems have hampered its commercialization. Recently, the atomically controllable HfO2 FeRAM with high-density-storage capability has been developed. Although HfO2 is compatible with silicon-based fabrication technologies, its experimental realization is yet to be investigated. Thus, in this study, we have synthesized ZrO2 -doped HfO2 (also referred to as HfO5 Zr0.5O2 or HZO) with enhanced operating characteristics via a solid-state reaction and optimized ball-milling process. The HZO ceramic targets are sintered at different temperatures between 1000 degrees C and 1600 degrees C, and the influence of the sintering temperature on the HZO target properties is investigated. As observed, the HZO target sintered at 1600 degrees C optimum for film growth.