Design Considerations For Chemically Amplified Euv Resist Materials

The development of Chemically Amplified Resists (CARs) for Extreme Ultra-Violet Lithography (EUVL) requires unique molecular and macromolecular design considerations. The combination of photon-induced variation effect coupled with material and processing variabilities makes stochastic consequences in EUV resist significantly more severe than that in ArF resist. Among the other factors, conversion of the scarce number of absorbed EUV photons into imaging events is directly modulated by acid generation quantum yield. In this study, we measure the EUV acid generation efficiency of different Photoacid Generators (PAGs). Our results show that in addition to PAG electronic properties, other structural-driven PAG properties can have a significant impact on resist sensitivity. In a complementary part of this study, we have measured PAG acid generation efficiency under EUV exposure in newly designed polymer matrixes. Such polymers comprise high absorption EUV elements and EUV-specific sensitizers. Insights into the effect of the polymer matrix on EUV acid generation quantum yield are presented.